1/6 BYW81G-200 byw81p-200 / byw81pi-200 ? july 2002 - ed: 3e high efficiency fast recovery rectifier diodes to-220ac (plastic) byw81p-200 n suited for smps n very low forward losses n negligible switching losses n high surge current capability n high avalanche energy capability n insulated version : insulating voltage = 2500 v rms capacitance = 7 pf description features single chip rectifier suited for switchmode power supply and high frequency dc to dc converters. packaged in to-220ac and d2pak, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. to-220ac ins. (plastic) byw81pi-200 symbol parameter value unit i f(rms) rms forward current 35 a i f(av) average forward current d = 0.5 byw81p tc=115c 15 a byw81pi/g tc=90c 15 i fsm surge non repetitive forward current tp=10ms sinusoidal 200 a tstg tj storage and junction temperature range -40to+150 -40to+150 c c absolute maximum ratings symbol parameter value unit v rrm repetitive peak reverse voltage 200 v k a k a k nc a d 2 pak (plastic) BYW81G-200 obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
byw81p-200 / byw81pi-200 / BYW81G-200 2/6 symbol test conditions min. typ. max. unit i r * t j = 25c v r =v rrm 20 m a t j = 100c 1.5 ma v f** t j = 125c i f =12a 0.85 v t j = 125c i f =25a 1.05 t j = 25c i f =25a 1.15 pulse test : * tp = 5 ms, duty cycl e<2% ** tp = 380 m s, duty cycl e<2% electrical characteristics static characteristics symbol test conditions min. typ. max. unit trr t j = 25c i f = 0.5a i r =1a irr = 0.25a 25 ns i f =1a v r = 30v di f /dt = -50a/ m s40 tfr t j = 25c i f =1a v fr =1.1xv f tr=10ns 15 ns v fp t j = 25c i f =1a tr=10ns 2 v recovery characteristics symbol parameter value unit rth (j-c) junction to case byw81p 2.0 c/w byw81pi / g 3.5 thermal resistance obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
byw81p-200 / byw81pi-200 / BYW81G-200 3/6 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 t i m =tp/t tp i m(a) p=10w p=20w p=30w fig. 2: peak current versus form factor. 0.1 1 10 100 200 tj=125 c o ifm(a) vfm(v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 fig. 3: forward voltage drop versus forward current (maximum values). 0.1 1.0 0.2 0.5 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp 1.0e-03 1.0e-02 1.0e-01 1.0e+00 k fig. 4: relative variation of thermal impedance junction to case versus pulse duration. 0 2.5 5 7.5 10 12.5 15 17.5 20 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig. 1: average forward power dissipation versus average forward current. 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 im t =0.5 t(s) i m(a) tc=25 c o tc=60 c o tc=90 c o fig. 6: non repetitive surge peak forward current versus overload duration. (byw81pi / byw81g) 0.001 0.01 0.1 1 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 im t =0.5 t(s) i m(a) tc=25 c o tc=75 c o tc=115 c o fig. 5: non repetitive surge peak forward current versus overload duration. (byw81p) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
byw81p-200 / byw81pi-200 / BYW81G-200 4/6 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig. 7: average current versus ambient temperature. (duty cycle : 0.5) (byw81p) 0 20 40 60 80 100 120 140 160 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig. 8: average current versus ambient temperature. (duty cycle : 0.5) (byw81pi / byw81g) 1 80 85 10 30 50 70 90 95 100 105 110 115 120 vr(v) f=1mhz tj=25 c o c(pf) fig. 9: junction capacitance versus reverse voltage applied (typical values). 11020406080 0 10 20 30 40 50 60 qrr(nc) 90%confidence tj=100 c tj=25 c o o if=if(av) dif/dt(a/us) fig. 10: recovery charges versus di f /dt. tj( c) qrr;irm[tj]/qrr;irm[tj=125 c] 0 25 50 75 100 125 150 0.00 0.25 0.50 0.75 1.00 1.25 1.50 irm qrr o o fig. 12: dynamic parameters versus junction temperature. 110 0.0 0.5 1.0 1.5 2.0 2.5 3.0 irm(a) dif/dt(a/us) 20 40 60 80 90%confidence tj=100 c o tj=25 c o if=if(av) fig. 11: peak reverse current versus di f /dt. obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
byw81p-200 / byw81pi-200 / BYW81G-200 5/6 n marking : type number n cooling method : c n weight : 2.2 g n recommended torque value : 0.8m.n n maximum torque value : 1.0m.n package mechanical data to-220ac (jedec outline) n marking : type number n cooling method : c n weight : 1.9 g n recommended torque value : 0.8m.n n maximum torque value : 1.0m.n package mechanical data to-220ac (isolated) a c d e m l7 h2 ? i l5 l6 l9 l4 g f1 f l2 ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.066 g 4.95 5.15 0.194 0.202 h2 10.00 10.40 0.393 0.409 l2 16.40 typ. 0.645 typ. l4 13.00 14.00 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.259 l9 3.50 3.93 0.137 0.154 m 2.6 typ. 0.102 typ. diam. i 3.75 3.85 0.147 0.151 b1 l2 a1 e f l b i a c b2 c1 c2 a2 ref. dimensions millimeters inches min. max. min. max. a 14.23 15.87 0.560 0.625 a1 4.50 0.177 a2 12.70 14.70 0.500 0.579 b 10.20 10.45 0.402 0.411 b1 0.64 0.96 0.025 0.038 b2 1.15 1.39 0.045 0.055 c 4.48 4.82 0.176 0.190 c1 0.35 0.65 0.020 0.026 c2 2.10 2.70 0.083 0.106 e 4.58 5.58 0.180 0.220 f 5.85 6.85 0.230 0.270 i 3.55 4.00 0.140 0.157 l 2.54 3.00 0.100 0.118 l2 1.45 1.75 0.057 0.069 obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
byw81p-200 / byw81pi-200 / BYW81G-200 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2002 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data d 2 pak (plastic) a c2 d r a2 m v2 c a1 g l l3 l2 b b2 e * * flat zone no less than 2mm ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 8.90 3.70 1.30 5.08 16.90 10.30 foot print dimensions (in millimeters) d2pak n cooling method: by conduction (method c) obsolete product(s) - obsolete product(s) obsolete product(s) - obsolete product(s)
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